lication sot-23 dimensions in inches description data sheet npn general purpose t r ansistor FMBT3904 ratings maximum ratings collector - emitter v oltage collector - base v oltage emitter - base v oltage collector current (continuous) v ceo 40 v d c v cbo 60 v d c v ebo 6.0 vdc i c 2 0 0 madc symbol v alue units ther mal characteristics characteristic t otal device dissipation fr-5 board (note1) t a = 25 o c derate above 25 o c thermal resistance t otal device dissipation alumina substrate, t a = 25 o c (note 2) derate above 25 o c thermal resistance junction and storage t emperature p d 225 m w 1.8 m w / o c r q ja 556 o c/w p d 300 m w 2.4 m w / o c r q ja 417 o c/w t j , t stg -55 to 150 o c symbol m a x units notes: (1) fr-5 = 1.0 x 0.75 x 0.062 in. (2) alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. (3) pulse test: pulse width < 300 m s, duty cycle < 2.0%. 2 3 1 1 2 3 mechanical dimensions .110 .060 .037 .037 .115 .016 .043 .004 .016 1 2 3
data sheet FMBT3904 npn general purpose transistor symbol min max unit h fe --- 40 --- 70 --- 100 300 60 --- 30 --- v ce(sat) vdc --- 0.2 --- 0.3 v be(sat) vdc 0.65 0.85 --- 0.95 dc current gain (i c = 0.1 madc, v ce = 1.0 vdc) (i c = 1.0 madc, v ce = 1.0 vdc) (i c = 10 madc, v ce = 1.0 vdc) (i c = 50 madc, v ce = 1.0 vdc) (i c = 100 madc, v ce = 1.0 vdc) collector - emitter saturation voltage (note 3) (i c = 10 madc, i b = 1.0 madc) (i c = 50 madc, i b = 5.0 madc) base - emitter saturation voltage (note 3) (i c = 10 madc, i b = 1.0 madc) (i c = 50 madc, i b = 5.0 madc) f t 300 --- mhz c obo --- 4.0 pf c ibo --- 8.0 pf h ie 1.0 10 k w h re 0.5 8.0 x10 -4 h fe 100 400 --- h oe 1.0 40 m mhos nf --- 5.0 db switching characteristic small-signal characteristic on characteristic current - gain - bandwidth product (i c = 10 madc, v ce = 20 vdc, f = 100 mhz) output capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) input impedance (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) voltage feedback ratio (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) small - signal current gain (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) output admittance (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) noise figure (v ce = 5.0 vdc, i c = 100 m adc, r s = 1.0 k w , f = 1.0 khz) delay time (v cc = 3.0 vdc, v be = 0.5 vdc, rise time i c = -10 madc, i b1 = 1.0 madc) storage time (v cc = 3.0 vdc, i c = 10 madc, fall time i b1 = i b2 = 1.0 madc) t d --- 35 ns t r --- 35 t s --- 200 ns t f --- 50 electrical characteristics @ 25 o c off characteristic symbol min max unit collector - emitter breakdown voltage (note 3) (i c = 1.0madc, i b = 0) collector - base breakdown voltage (i c = 10 m adc, i e = 0) emitter - base breakdown voltage (i e = 10 m adc, i c = 0) base cutoff current (v ce = 30vdc, v eb = 3.0vdc) collector cutoff current (v ce = 30vdc, v eb = 3.0vdc) v br(ceo) 40 --- vdc v br(cbo) 60 --- vdc v br(ebo) 6.0 --- vdc i bl --- 50 nadc i cex --- 50 nadc
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